Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters

نویسندگان

چکیده

This paper investigates the influence of power semiconductor parasitic components on ground leakage current in three-phase Current Source Inverter topology, literature called H7 or CSI7. topology allows reducing converter conduction losses with respect to classic CSI, but at same time makes more susceptible capacitances semiconductors devices. In present work, a grid-connected for photovoltaic systems is considered as case study, investigate equivalent circuit current. The analysis can be extended applications regarding electric drives, since HF model machines characterized by stray capacitance between windings and stator slots/motor frame. Simulation results proved correctness proposed simplified common-mode highlighted need an additional inductor filter resonance frequencies close harmonics switching frequency. Experimental are agreement theoretical analysis.

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ژورنال

عنوان ژورنال: Energies

سال: 2021

ISSN: ['1996-1073']

DOI: https://doi.org/10.3390/en14217364